N TYPE GE SECRETS

N type Ge Secrets

s is of your substrate material. The lattice mismatch causes a big buildup of pressure Electrical power in Ge levels epitaxially grown on Si. This strain Vitality is mostly relieved by two mechanisms: (i) technology of lattice dislocations at the interface (misfit dislocations) and (ii) elastic deformation of both the substrate as well as Ge island

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